IP

ParameterValueSizeNotes
Pixel Size30 x 30μm
Conversion Gain Settings2-0.12μV/e⁻4-bit gain control
Supply1.5V
Total Current< 200nAOpAmp bias is programmable
FW0.6 - 10Me⁻Scales with conversion gain
Max. Output Swing1.2V
Input-referred Noise≤ 300μV@ unity gain
Linearity≤ 0.1%@ low-light to 1/2 well condition
  • Analog pixel supports in-pixel skimming, CDS, (RSSI / programmable CTIA gain)
ParameterValueUnitNotes
Pixel Size30 x 30μmOnly using 10 x 30 pixel area
Preview Counter Depth4bit
Supply1.2V
Max. Voltage0.6V300-77K
Preview FW1.6Me⁻Approximately 100ke⁻ steps
  • Digital pixel supports preview image mode via RSSI bits, low-power image processing, compressive imaging
ParameterValueUnitNotes
Size30 x 544μmColumn parallel
Gain Settings1-4.5 in 0.5 steps-3-bit SPI gain control
Supply1.5V
Total current< 1.5μAIncluding CMFB circuit
AoI55-49dB300-77 K
UGF6.5-14MHzSupports >1Msps ADC @ 14b
Input / output common mode- / 0.75VAC coupled input
Max. Output Swing1VHalf differential
Input-referred Noise≤ 220μV@ unity gain
Linearity≤ 0.1%@≤ 0.5 V & +/- 0.3% across 1V range
  • 15µm-30µm column pixel flexibility
  • Programmable gain from 1x to 4.5x via SPI control
  • Low input-referred noise design optimized for operation with high-speed ADC
ParameterValueUnitNotes
Size30 x 866μmColumn parallel
Resolution Setting8/10/12/14bitSPI control
Sampling rate12-1200kspsPower dissipation optimization
Supply1.5V
Total current< 1 - < 5μADepending on sample rate / frame time
Noise250-500μVInput-referred w/o PGA
DNL0.3 @ 10-bit
1.7 @ 14-bit
LSB
INL+1.2/-0.2 @ 10-bit
+6/-4 @ 14-bit
-
  • 15µm-30µm column pixel flexibility
  • ~1Msps in 12-bit resolution mode (scales in speed with other bit modes)
  • High-speed design enables very efficient power scaling for most use cases
ParameterValueUnitNotes
Size20 x 100μm
Swing Settings 50 mV steps-3-bit SPI swing control +/-200 mV
Supply1.2V
Total current< 3.5mA
Max. Output Swing+/-350mV300-77k
Input / output common mode0.6 / 0.6V300-77k
Date Rate800MbpsSDR rate
ParameterP-QuenchN-QuenchAny SPAD PAny SPAD NUnitsNotes
Sense Time1.42.14.54.5nsDependent on APD Parameters
Quench Time3.5464nsPhoton to Quenched
Reset Time334.54.5nsEnd of HO to full reset
Hold-Off time1-1001-1001-1001-100ns
Hold-Off time Resolution45454545ps
Dead Time7.58.11210.1ns
Max Count Rate 1331238499MHz
Power Consumption (50MHz)0.40.621.21.5WPhoton Arrival Rate = 50MHz
Excess Bias≤ 30≤ 30≤ 45≤ 45V
Interface Type SPI or I2CSPI or I2CSPI or I2CSPI or I2C-User Selectable
Output TypeLVDS/CML/TTL*LVDS/CML/TTL*LVDS/CML/TTL*LVDS/CML/TTL*-*TTL Limited to 50 MHz
Chip Size2 mm x 1 mm2 mm x 1 mm2 mm x 1 mm2 mm x 1 mm-
  • Active Quenching IC to control Geiger Mode Avalanche Photodiodes
  • Adjustable Hold-Off time programmable from 1ns to 100ns
  • “Any SPAD” is polarity programmable
  • SPI or I2C programming interface available in one package
  • Output data available as LVDS, CML, or TTL*
ParameterValueUnitsNotes
Frequency0.5-16GHz
Psat37 - 40dBm
PAE10 - 30%@ Psat
Gain9 - 11db@ Psat
S2115 - 21dBLinear Gain
Die Size1.8 x 3.5mm
Process0.15μm GaN
ParameterValueUnitsNotes
Frequency27 - 30GHz
Psat34 - 36dBm
PAE10 - 20%Power Added Efficiency
Gain15 - 21dB
S2112 - 14dBLinear Gain
Supply Voltage15 - 40V
Die Size3.5 x 5mm
Process0.15μm GaN
ParameterValueUnitNotes
Number of Channels8-
Operation ModesLM, GM-Linear and Geiger mode
LM Conversion Gain47 - 107dBΩAdjustable Feedback Resistor (Rfb)
LM Bandwidth20 - 700MHzAdjustable feedback resistor (Rfb)
LM Input-Referred Noise409.8fA / √HzAt highest conversion gain
LM Dynamic Range50 dBFor single conversion gain setting
Dynamic Range100dBAggregate across operation modes
Channel Pitch250μm
Power Consumption< 30mWPer channel
Area Consumption250 x 1800μm x μmPer channel
ParameterValueUnitNotes
Open-Loop Gain44dB
OTA Gain-Bandwidth9GHz
Conversion Gain47 - 107dBΩAdjustable feedback resistor (Rfb)
Bandwidth20 - 700MHzAdjustable feeedback resistor (Rfb)
Input-Referred Noise409.8fA / √Hz
Dynamic Range100dBAggregate across operation modes
Power Consumption12mW
Area Consumption160 x 160μm x μm
ParameterValueUnitNotes
Input-TypeFully-Differential-Fully-differential signaling
Gain10 - 14dB
Gain-Bandwidth5.15GHz
Gain Programability1dB / step2-bit SPI programmable
Input-Referred Noise6.24nV / √Hz
Output Swing1VFully-differential
Power Consumption4.8mW
Area Consumption150 x 30μm x μm
ParameterValueUnitNotes
Input-TypeFully-differential-Fully-differential signaling
Bandwidth> 1GHz500 μV overdrive
Input-referred Noise< 350μVrms
Input-referred Offset17,1mV
Propagation Delay< 1ns
Threshold (Programmable)0 - 540mVFully-differential
Hysteresis40mVSPI programmable
Power Consumption2.1mW
Area Consumption40 x 50μm x μm
ParameterValueUnitNotes
Sampling Period7.7 - 800ns
Number of bits8, 10bits
LSB50-1000psProgrammable, continous range
Differential Nonlinearity (DNL)< 0.75LSB
Integral Nonlinerarity< 2.5LSBFully-differential
Power consumption< 2mWSPI programmable
Area Consumption220 x 305μm x μm
ParameterValueUnitNotes
Operating Frequency1GHz
Memory DepthPer channel
ThroughputPer channel
Latency
Max Distance700km
Range (Programmable)40kmAdd programmability
Power Consumption6mWSPI programmable
Area Consumption250 x 775μm x μm
ParameterValue
StandardFIPS203
Bus InterfaceAXI-Lite
Strength modesML-DSA-44, ML-DSA-65, ML-DSA-97
Throughput2.6 Gbps
Clock Rate80 MHz
Power Consumption72.68 mW
Technology12-nm
ParameterValue
StandardFIPS204
Bus InterfaceAXI-Lite
Strength ModesML-KEM-512
Size1250 x 2700 um²
Throughput3.2 Gbps
Clock Rate100 MHz
Technology12-nm

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